Mostrar el registro sencillo del ítem

dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2023-08-26T23:50:11Z
dc.date.accessioned2024-02-27T16:29:50Z
dc.date.available2023-08-26T23:50:11Z
dc.date.available2024-02-27T16:29:50Z
dc.date.issued2008-01-05
dc.identifier.citationDE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Study of matching properties of graded-channel SOI MOSFETs. Journal of Integrated Circuits and Systems, v. 3, n. 2, p. 69-75, 2008.
dc.identifier.issn1807-1953
dc.identifier.urihttps://hdl.handle.net/20.500.12032/122151
dc.description.abstractIn this paper an overall analysis on the matching properties of Graded-Channel (GC) SOI MOSFETs in comparison to conventional SOI transistors is performed. Experimental results show that GC devices present poorer matching behavior in comparison to conventional SOI counterpart for equal mask channel length, whereas for same effective channel length, almost the same matching behavior. The analytical model for the drain current of GC devices is used to investigate the reasons for this matching worsening. Two-dimensional numerical simulations are used to validate the model-based analysis both in linear and saturation regions.
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.titleStudy of matching properties of graded-channel SOI MOSFETs
dc.typeArtigo


Ficheros en el ítem

FicherosTamañoFormatoVer

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem


© AUSJAL 2022

Asociación de Universidades Confiadas a la Compañía de Jesús en América Latina, AUSJAL
Av. Santa Teresa de Jesús Edif. Cerpe, Piso 2, Oficina AUSJAL Urb.
La Castellana, Chacao (1060) Caracas - Venezuela
Tel/Fax (+58-212)-266-13-41 /(+58-212)-266-85-62

Nuestras redes sociales

facebook Facebook

twitter Twitter

youtube Youtube

Asociaciones Jesuitas en el mundo
Ausjal en el mundo AJCU AUSJAL JESAM JCEP JCS JCAP