| dc.contributor.author | MARINIELLO, G. | |
| dc.contributor.author | Marcelo Antonio Pavanello | |
| dc.date.accessioned | 2022-01-12T22:00:16Z | |
| dc.date.accessioned | 2024-02-27T16:29:48Z | |
| dc.date.available | 2022-01-12T22:00:16Z | |
| dc.date.available | 2024-02-27T16:29:48Z | |
| dc.date.issued | 2015-05-24 | |
| dc.identifier.citation | MARINIELLO, G.; PAVANELLO, M. A. Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices. ECS Transactions. v, 66, n, 1, p. 259-266, Mayo, 2015. | |
| dc.identifier.issn | 1938-6737 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/122149 | |
| dc.description.abstract | This paper aims at comparing the self-heating effects influence between FinFETs and Junctionless Nanowire Transistors (JNT) based on three-dimensional numerical simulations. The self-heating of JNT made with different materials, Silicon and Silicon Carbide, is also studied. The results show lower impact in JNT compared to FinFETs. Also, the self-heating is lower in silicon devices then silicon carbide. | |
| dc.relation.ispartof | ECS Transactions | |
| dc.rights | Acesso Restrito | |
| dc.title | Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices | |
| dc.type | Artigo de evento | |
