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dc.contributor.authorMARINIELLO, G.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-01-12T22:00:16Z
dc.date.accessioned2024-02-27T16:29:48Z
dc.date.available2022-01-12T22:00:16Z
dc.date.available2024-02-27T16:29:48Z
dc.date.issued2015-05-24
dc.identifier.citationMARINIELLO, G.; PAVANELLO, M. A. Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices. ECS Transactions. v, 66, n, 1, p. 259-266, Mayo, 2015.
dc.identifier.issn1938-6737
dc.identifier.urihttps://hdl.handle.net/20.500.12032/122149
dc.description.abstractThis paper aims at comparing the self-heating effects influence between FinFETs and Junctionless Nanowire Transistors (JNT) based on three-dimensional numerical simulations. The self-heating of JNT made with different materials, Silicon and Silicon Carbide, is also studied. The results show lower impact in JNT compared to FinFETs. Also, the self-heating is lower in silicon devices then silicon carbide.
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleSimulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices
dc.typeArtigo de evento


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