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dc.contributor.authorCOSTA, F. J.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorCAPOVILLA, C. E.
dc.contributor.authorRodrigo Doria
dc.date.accessioned2022-11-01T06:04:19Z
dc.date.accessioned2024-02-27T16:29:41Z
dc.date.available2022-11-01T06:04:19Z
dc.date.available2024-02-27T16:29:41Z
dc.date.issued2022-08-05
dc.identifier.citationCOSTA, F. J.; TREVISOLI, R.; CAPOVILLA, C. E.; DORIA, R. Standard MOS Diodes Composed by SOI UTBB Transistors. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.
dc.identifier.urihttps://hdl.handle.net/20.500.12032/122137
dc.description.abstract© 2022 IEEE.The main objective of this work is to present an analysis of the performance of UTBB SOI transistors working as standard diodes, where the implementation of ground planes and substrate bias are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at -2 V and with a P-type GP implemented. However, both conditions result in increased threshold voltage.
dc.relation.ispartof36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
dc.rightsAcesso Restrito
dc.titleStandard MOS Diodes Composed by SOI UTBB Transistors
dc.typeArtigo de evento


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