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dc.contributor.authorFERREIRA, R. S.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2023-08-26T23:50:52Z
dc.date.accessioned2024-02-27T16:29:38Z
dc.date.available2023-08-26T23:50:52Z
dc.date.available2024-02-27T16:29:38Z
dc.date.issued2004-09-11
dc.identifier.citationFERREIRA, R. S.; PAVANELLO, M. A. Improved current mirror performance using graded-channel silicon-on-insulator devices in high temperature operation. Proceedings - Electrochemical Society, v. 3, p. 45-50, sept. 2004.
dc.identifier.urihttps://hdl.handle.net/20.500.12032/122132
dc.description.abstractThis work studies the output characteristics of analog current mirror using graded-channel in comparison to conventional Silicon-On-Insulator MOSFETs in high temperature operation. The output characteristics are discussed, based on simulation and experimental results. The Mirroring Precision, Output Swing and Output Resistance are extremely improved at high temperature thanks to the reduced output conductance in graded-channel transistors.
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleImproved current mirror performance using graded-channel silicon-on-insulator devices in high temperature operation
dc.typeArtigo de evento


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