| dc.contributor.author | DE SOUZA FINO, LEONARDO NAVARENHO | |
| dc.contributor.author | Gimenez, S. P. | |
| dc.contributor.author | RENAUX, C. | |
| dc.contributor.author | FLANDRE, DENIS | |
| dc.contributor.author | GUAZZELLI DA SILVEIRA, MARCILEI APARECIDA | |
| dc.date.accessioned | 2019-08-19T23:47:19Z | |
| dc.date.accessioned | 2022-09-21T19:52:28Z | |
| dc.date.available | 2019-08-19T23:47:19Z | |
| dc.date.available | 2022-09-21T19:52:28Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | DE SOUZA FINO, LEONARDO NAVARENHO; Gimenez, S. P.; RENAUX, C.; FLANDRE, DENIS; GUAZZELLI DA SILVEIRA, MARCILEI APARECIDA. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43, 2015. | |
| dc.identifier.issn | 1807-1953 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/40972 | |
| dc.relation.ispartof | JICS. Journal of Integrated Circuits and Systems (Ed. Português) | |
| dc.rights | Acesso Restrito | |
| dc.title | The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation | pt_BR |
| dc.type | Artigo | pt_BR |
