| dc.contributor.author | Emam M. | |
| dc.contributor.author | Pavanello M.A. | |
| dc.contributor.author | Danneville F. | |
| dc.contributor.author | Vanhoenacker-Janvier D. | |
| dc.contributor.author | Raskin J.-P. | |
| dc.date.accessioned | 2019-08-19T23:45:13Z | |
| dc.date.available | 2019-08-19T23:45:13Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | EMAM, Mostafa; PAVANELLO, M.A.; DANNEVILLE, F.; VANHOENACKER-JANVIER, D.; RASKIN, Jean Pierre. High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs. ADVANCED MATERIALS RESEARCH (ONLINE), v. 276, p. 67-75, 2011. | |
| dc.identifier.issn | 1022-6680 | |
| dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/1139 | |
| dc.description.abstract | The effect of elevated temperature on the harmonic distortion in Graded-Channel MOSFETs is presented in this work. The Graded-Channel devices show interesting advantages in terms of nonlinear behavior compared to classical devices especially at higher temperatures up to 200°C. © (2011) Trans Tech Publications, Switzerland. | |
| dc.relation.ispartof | Advanced Materials Research | |
| dc.rights | Acesso Restrito | |
| dc.title | High temperature effects on harmonic distortion in submicron SOI graded-channel MOSFETs | |
| dc.type | Artigo | |
