| dc.rights.license | Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY 3.0). Fonte: https://iopscience.iop.org/article/10.1088/1742-6596/1291/1/012025
Acesso em: 22 jun. 2021 | |
| dc.contributor.author | AGUIAR, V. A. P. | |
| dc.contributor.author | MEDINA, N. H. | |
| dc.contributor.author | ADDED, N. | |
| dc.contributor.author | MACCHIONE, E. L. A. | |
| dc.contributor.author | ALBERTON, S. G. | |
| dc.contributor.author | RODRIGUES, C. L. | |
| dc.contributor.author | SILVA, T. F. | |
| dc.contributor.author | ZAHN, G. S. | |
| dc.contributor.author | GENEZINI, F. A. | |
| dc.contributor.author | MORALLES, M. | |
| dc.contributor.author | BENEVENUTI, F. | |
| dc.contributor.author | GUAZZELLI, Marcilei Aparecida | |
| dc.date.accessioned | 2021-06-22T16:14:47Z | |
| dc.date.available | 2021-06-22T16:14:47Z | |
| dc.date.issued | 2019-01-01 | |
| dc.identifier.citation | AGUIAR, V A P; MORALLES, M; BENEVENUTI, F; GUAZZELLI, M. A. ; MEDINA, N H; ADDED, N; MACCHIONE, E L A; ALBERTON, S G; RODRIGUES, C L; SILVA, T F; ZAHN, G S; GENEZINI, F A. Thermal neutron induced upsets in 28nm SRAM. JOURNAL OF PHYSICS. CONFERENCE SERIES, v. 1291, p. 1-4, 2019. | pt_BR |
| dc.identifier.issn | 1742-6588 | |
| dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/3238 | |
| dc.description.abstract | In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts. | en |
| dc.language.iso | en | pt_BR |
| dc.relation.ispartof | JOURNAL OF PHYSICS. CONFERENCE SERIES | |
| dc.rights | Acesso Aberto | |
| dc.title | Thermal neutron induced upsets in 28nm SRAM | pt_BR |
| dc.type | Artigo | pt_BR |
